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| RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz Features l l l l l DU2812OV N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices .. Absolute Maximum Ratings at 25C Electrical Characteristics Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25C Symbol BV,,, '05s `GSS V GSfW GM C ISS C oss C Rss GP `1D 5 13 60 10 2.0 3.0 Min 65 Max 6.0 6.0 6.0 270 240 48 - Units V mA pA V S pF pF PF dB % % V,,=O.O V, l,s=30.0 mA' V,,=28.0 v,,=20.0 V,,=lO.O V,,=lO.O V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 v, v,,=o.o v, v,,=o.o V' V' Test Conditions Leakage Current Leakage Current Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss V, 1,,=600.0 V, 1,,=6000.0 mA' A, AV,,=l .O V, 80 us Pulse' V, F=l .O MHz' V, F=l .O MHz' V, F=l .O MHz' V, I,,=600 V, I,,=600 V, I,,=600 mA, P,,,=120.0 mA, P,,fl20.0 mA, P,,,=120.0 W, F=175 MHz W, F=l7.5 MHz W, F=175 MHz L Load Mismatch Tolerance VSWR-T - 3O:l - V,,=28.0 V, I,,=600 mA, P,e120.0 W, F=175 MHz * Per side Specifications Subject to Change Without Notke. MIA-COM, Inc. Tel. (800) 366-2266 Fax (800) 618-8883 D Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF MOSFET Power Transistor, 12OW, 28V DU2812OV v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V&z8 25 EFFICIENCY W 70 vs FREQUENCY mA P,,=l20 W V I,,=600 mA P,,,=l20 V,,=28 V I,,=600 20 5 s z d 15 10 0 50 150 200 50 0 25 50 100 150 175 A 200 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT I',,=28 140 - vs POWER INPUT POWER OUTPUT F=175 MHz vs SUPPLY I,,=600 VOLTAGE V I,,=600 mA mA P,,=3.0 W 20 L 0.1 0.2 0.3 1 2 3 4 5 6 7 6 I 9 29 25 30 I 33 POWER INPUT(W) SUPPLY VOLTAGE (V) Specifications Subject to Change Without Notice. M/A-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 12OW, 28V DU2812OV v2.00 Typical Device Impedance Frequency (MHz) 30 100 175 ) Z,,, (OHMS) 3.0 -j 12.5 1.5 - j 8.5 1.0 - j 6.0 ZLOAo (OHMS) ) 8.0 +j 6.0 7.0 + j 6.5 6.5 + j 5.0 - ,. V,,=28 V, I,,=.600 mA, PoUs=120 Watts Z,, is the series equivalent input impedance of the device from gate to gate. as measured from drain to drain. Z LOAD the optimum series equivalent is load impedance RF Test Fixture PARTS LIST TRIMMER CMAC~OR WPAC!ToR O.WlpF UCQF TulHMER CAPACrroR CAPAcltoR CAPACrrOR SSPF SopF S-SGPF ELEcTRcLs-Tx o.so'xo.lo'TFucs O.STXO.IO'TRACEON 7.5 TURNS RESISTOR REsKroR so WM c4mcrOR loow=so VOLTS '02s LOOP ON mAuocv.,25'x SOAR0 OF NO. 20 AWG COPPER 13 OHMS 2 WATTS 10x ONMS WIRE X 0.31' SALUN CORES. 2 TURNS OF so ONM coAxTNRU 2srAcKPoLE~.I522 41 TRAMFORMER 2 STACKPOLE ou2s1m" Flu 0.082 2 TURNS SAWN OF 2 M ONM COAX TNRU CORES 57.1S22 Specifications Subject to Change Without Notice. WA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 |
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